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Indium(III) phosphide, polycrystalline lump, 99.99% (metals basis)
Description
InP is used in high-power and high-frequency electronics because of its superior electron velocity. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. It is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesar product portfolio. Some documentation and label information may refer to the legacy brand. The original Alfa Aesar product / item code or SKU reference has not changed as a part of the brand transition to Thermo Scientific Chemicals.
InP is used in high-power and high-frequency electronics because of its superior electron velocity. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. It is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
Solubility
Insoluble in water.
Notes
Store in a cool, dry conditions in a well sealed container. Incompatible with oxidizing agent.
Specifications
Specifica
| Melting Point | 1070°C |
| Physical Form | Polycrystalline Lump |
| Quantity | 1 g |
| Merck Index | 14,4953 |
| Solubility Information | Insoluble in water. |
| Formula Weight | 145.79 |
| Percent Purity | 99.99% |
| Density | 4.81 |
| Assay | (metals basis) |
| Chemical Name or Material | Indium(III) phosphide |
RUO – Research Use Only
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